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| MCC Features omponents 21201 Itasca Street Chatsworth !"# $ % !"# BCW66H NPN Small Signal Transistor 330mW SOT-23 A D l Ideally Suited for Automatic Insertion l 150oC Junction Temperature l Low Current, Low Voltage l Epitaxial Planar Die Construction Mechanical Data l Case: SOT-23, Molded Plastic l Terminals: Solderable per MIL-STD-202, Method 208 l Marking: EH l Weight: 0.008 grams ( approx.) Maximum Ratings @ 25oC Unless Otherwise Specified F E C B Charateristic Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current(DC) Peak Collector Current Base Current(DC) Peak Base Current Power Dissipation@T s=79oC Thermal Resistance, Junction to Ambient Air Thermal Resistance, Junction to Soldering Point Operating & Storage Temperature Symbol VCEO VCBO VEBO IC ICM IB IBM Pd RJA RJS Value 45 75 5 800 1000 100 200 330 285(1) 215 Unit V V V mA mA mA mA mW o DIM A B C D E F G H J K INCHES MIN .110 .083 .047 .035 .070 .018 .0005 .035 .003 .015 G H J K DIMENSIONS MM MIN 2.80 2.10 1.20 .89 1.78 .45 .013 .89 .085 .37 C/W C/W o MAX .120 .098 .055 .041 .081 .024 .0039 .044 .007 .020 MAX 3.04 2.64 1.40 1.03 2.05 .60 .100 1.12 .180 .51 NOTE o Suggested Solder Pad Layout .031 .800 .035 .900 .079 2.000 inches mm Tj, TSTG -55~150 C Notes: (1) Mounted on FR-4 printed-circuit board .037 .950 .037 .950 www.mccsemi.com BCW66H Electrical Characteristics Parameter DC Current Gain(1) at VCE = 10V, IC = 100A at VCE = 1V, IC = 10mA at VCE = 1V, IC = 100mA at VCE = 2V, IC = 500mA Collector-Emitter Saturation Voltage at IC = 100mA, IB = 10mA at IC = 500mA, IB = 50mA Base-Emitter Saturation Voltage(1) at IC = 100mA, IB = 10mA at IC = 500mA, IB = 50mA Collector-Emitter Breakdown Voltage at IC = 10mA, IB = 0 Collector-Base Breakdown Voltage at IC = 10A, IB = 0 Emitter-Base Breakdown Voltage at IE = 10A, IC = 0 Collector-Base Cut-off Current at VCB = 45V, IE = 0 at VCB = 45V, IE = 0, TA = 150C Emitter-Base Cut-off Current at VEB = 4V, IC = 0 Gain-Bandwidth Product at VCE = 10V, IC = 20mA, f = 100MHz Collector-Base Capacitance at VCB = 10V, f = 1MHz Emitter-Base Capacitance at VEB = 0.5V, f = 1MHz Note: (1) Pulse test: t 300s, D = 2% (1) MCC Ratings at 25C ambient temperature unless otherwise specified. Symbol Min. TYP. Max. Unit hFE hFE hFE hFE VCEsat VCEsat VBEsat VBEsat V(BR)CEO V(BR)CBO V(BR)EBO ICBO ICBO IEBO 80 180 250 100 - - - - 630 - - - - - - - 45 75 5 - - - - - - - 0.3 0.7 1.25 2 - - - V V V V V V V - - - - - - 20 20 20 nA A nA fT CCB CEB - - - 100 6 60 - - - MHZ pF pF www.mccsemi.com |
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